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PDF 2SC3811 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3811 | |
| Descripción | Silicon NPN epitaxial planer type(For high speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistor
2SC3811
Silicon NPN epitaxial planer type
For high speed switching
s Features
q High-speed switching.
q Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
40
40
5
300
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Base
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
ICBO
IEBO
hFE*
VCE(sat)
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 1V, IC = 10mA
IC = 10mA, IB = 1mA
0.1 µA
0.1 µA
60 200
0.17 0.25
V
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
IC = 10mA, IB = 1mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
1.0 V
450 MHz
2 6 pF
Turn-on time
Turn-off time
Storage time
ton
toff Refer to the measurment circuit
tstg
17 ns
17 ns
10 ns
*hFE Rank classification
Rank
Q
hFE 60 ~ 120
R
90 ~ 200
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC3811.PDF ] | |
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