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PDF 2SC3757 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3757 | |
| Descripción | Silicon NPN epitaxial planer type(For high speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SC3757
Silicon NPN epitaxial planer type
For high speed switching
I Features
• High-speed switching
• Low collector to emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
• Allowing pair use with 2SA1738
0.40+–00..0150
3
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10°
Unit: mm
0.16+–00..0160
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCES
VEBO
ICP
IC
PC
Tj
Tstg
40
40
5
300
100
200
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
Marking Symbol: 2Y
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
tstg
VCB = 15 V, IE = 0
VEB = 4 V, IC = 0
VCE = 1 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
60
Refere to the measurement circuit
Note) *: Rank classification
Rank Q R
hFE
Marking symbol
60 to 120
2YQ
90 to 200
2YR
Typ Max
0.1
0.1
200
0.17 0.25
1.0
450
26
17
17
10
Unit
µA
µA
V
V
MHz
pF
ns
ns
ns
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC3757.PDF ] | |
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