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PDF 2SC3707 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3707 | |
| Descripción | Silicon NPN epitaxial planer type(For UHF amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC3707
Silicon NPN epitaxial planer type
For UHF amplification
s Features
q Possible with the small current and low voltage.
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
10
7
2
10
50
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Bae
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 2X
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
Emitter cutoff current
IEBO VEB = 1.5V, IC = 0
Forward current transfer ratio
hFE
VCE = 1V, IC = 1mA
50 100
Transition frequency
fT VCE = 1V, IC = 1mA, f = 800MHz
4
Collector output capacitance
Cob
VCB = 1V, IE = 0, f = 1MHz
0.4
Foward transfer gain
| S21e |2
VCE = 1V, IC = 1mA, f = 800MHz
6
Maximum unilateral power gain GUM
VCE = 1V, IC = 1mA, f = 800MHz
15
Noise figure
NF VCE = 1V, IC = 1mA, f = 800MHz
3.5
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
1 nA
1 µA
150
GHz
pF
dB
dB
dB
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC3707.PDF ] | |
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