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Datasheet 2SB649 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB649 | Silicon PNP Epitaxial 2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage E |  Hitachi Semiconductor | transistor |
| 2 | 2SB649 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB649/A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB669/A
PNP SILICON TRANSISTOR
1
SOT-89
1
TO-126
1
TO-126C
1
TO-92
*Pb-free plating product number: 2SB649L/2SB649A |  Unisonic Technologies | transistor |
| 3 | 2SB649 | PNP Epitaxial Planar Transistors 2SB649/2SB649A
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Tempera |  Weitron Technology | transistor |
| 4 | 2SB649 | TO-126C Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-126C Plastic-Encapsulated Transistors
2SB649/2SB649A
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (PNP) TO-126C
Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction |  TRANSYS Electronics | transistor |
| 5 | 2SB649 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB649
DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669
APPLICATIONS ·Powe |  Inchange Semiconductor | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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