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PDF 2SC3583 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3583 | |
| Descripción | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF
1.2 dB TYP.
• Ga
13 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
13
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0 A VEB = 1 V, IE = 0
DC Current Gain
hFE *
50 100 250
VCE = 8 V, IC = 20 mA
Gain Bandwidth Product
fT
9 GHz VCE = 8 V, IC = 20 mA
Feed-Back Capacitance
Insertion Power Gain
Cre **
0.35 0.9
S21e2
11
13
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
15
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.2 2.5 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz
* Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R33/Q *
R34/R *
R35/S *
Marking
R33
R34
R35
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
© 1984
1 page  
[MEMO]
2SC3583
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC3583.PDF ] | |
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