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PDF 2SC3506 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3506 | |
| Descripción | Silicon NPN triple diffusion planar type(For high-speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC3506 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power Transistors
2SC3506
Silicon NPN triple diffusion planar type
For high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1000
1000
800
7
6
3
2
70
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO(sus)*
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
*VCEO(sus) Test circuit
50/60Hz
mercury relay
Conditions
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 0.5A, L = 50mH
VCE = 5V, IC = 2A
IC = 2A, IB = 0.4A
IC = 2A, IB = 0.4A
VCE = 5V, IC = 0.2A, f = 1MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 250V
X
L 50mH
120Ω
6V
Y
1Ω
15V
G
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
800 V
6
1.5 V
1.5 V
4 MHz
1 µs
2.5 µs
0.5 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3506.PDF ] | |
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