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PDF 2SC3496 Data sheet ( Hoja de datos )

Número de pieza 2SC3496
Descripción Silicon NPN triple diffusion planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SC3496 Hoja de datos, Descripción, Manual

Power Transistors
2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
For power switching
Features
High-speed switching
High collector-base voltage (Emitter open) VCBO
Satisfactory linearity of forward current transfer ratio hFE
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
Collector-base voltage
(Emitter open)
2SC3496
2SC3496A
Collector-emitter voltage 2SC3496
(E-B short)
2SC3496A
Collector-emitter voltage 2SC3496
(Base open)
2SC3496A
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
900
1 000
900
1 000
800
900
7
0.3
1
2
30
1.3
150
55 to +150
V
V
V
V
A
A
A
W
°C
°C
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SC3496 VCEO
2SC3496A
IC = 1 mA, IB = 0
800 V
900
Collector-base cutoff current 2SC3496 ICBO
(Emitter open)
2SC3496A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900 V, IE = 0
VCB = 1 000 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 0.05 A
VCE = 5 V, IC = 0.5 A
IC = 0.2 A, IB = 0.04 A
IC = 0.2 A, IB = 0.04 A
VCE = 10 V, IC = 0.05 A, f = 1 MHz
IC = 0.2 A
IB1 = 0.04 A, IB2 = − 0.08 A
VCC = 250 V
50 µA
50
50 µA
6
3
1.5 V
1.0 V
4 MHz
1.0 µs
3.0 µs
1.0 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00104AED
1

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