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PDF CEM2539 Data sheet ( Hoja de datos )

Número de pieza CEM2539
Descripción Dual Enhancement Mode Field Effect Transistor
Fabricantes CET 
Logotipo CET Logotipo



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CEM2539
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 7.5A, RDS(ON) = 22m@VGS = 10V.
RDS(ON) = 24m@VGS = 4.5V.
RDS(ON) = 33m@VGS = 2.5V.
-20V, -4.0A, RDS(ON) = 80m@VGS = -10V.
RDS(ON) = 100m@VGS = -4.5V.
RDS(ON) = 150m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1
*1K
G1
G2
D2
S1 S2
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 7.5
IDM 25
P-Channel
-20
±12
-4.0
-15
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2007.Sep.
http://www.cetsemi.com
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CEM2539 pdf
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P-CHANNEL
15
-VGS=-10,-8,-6V
12
9
-VGS=2V
6
3
0
012345
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
1500
1250
1000
Ciss
750
500
250 Coss
0 Crss
02
4
6
8 10
-VDS, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
5
CEM2539
10
8
6
4
2 25 C
TJ=125 C
0
0 0.5 1.0
-55 C
1.5
2.0
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-3.5A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
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