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PDF ZXGD3105N8 Data sheet ( Hoja de datos )

Número de pieza ZXGD3105N8
Descripción SYNCHRONOUS MOSFET CONTROLLER
Fabricantes Zetex Semiconductors 
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A Product Line of
Diodes Incorporated
ZXGD3105N8
SYNCHRONOUS MOSFET CONTROLLER IN SO-8
Description
ZXGD3105N8 synchronous controller is designed for driving a
MOSFET as an ideal rectifier. This is to replace a diode for increasing
the power transfer efficiency.
The device is comprised of a differential amplifier detector stage and
high current driver. The detector monitors the reverse voltage of the
MOSFET such that if body diode conduction occurs a positive voltage
is applied to the MOSFET’s Gate pin. Once the positive voltage is
applied to the Gate the MOSFET switches on allowing reverse current
flow. The detectors’ output voltage is then proportional to the
MOSFET Drain-Source voltage and this is applied to the Gate via the
driver. This action provides a rapid MOSFET turn off as Drain current
decays to zero.
Applications
Flyback and Resonant Converters in:
Low Voltage AC / DC Adaptors
Set Top Box
Computing Power Supplies - ATX and Server PSU
Low Voltage DC / DC conversion
Features
Low standby power with quiescent supply current < 1mA
4.5V operation enables low voltage supply
Proportional gate drive for fast turn-off
Operation up to 500kHz
Critical Conduction Mode (CrCM) & Continuous Mode (CCM)
Compliant with Eco-design directive
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
Vcc
DNC
BIAS
DRAIN
Top View
Pin-Out
GATE
GND
DNC
REF
Ordering Information (Note 3)
Product
ZXGD3105N8TC
Marking
ZXGD 3105
Reel size (inches)
13
Notes:
1. No purposefully added lead
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Tape width (mm)
12
Quantity per reel
2500
ZXGD3105N8
Document Number DS35101 Rev. 1 – 2
ZXGD
3105
YY WW
ZXGD
3105
YY
WW
= Product Type Marking Code, Line 1
= Product Type Marking Code, Line 2
= Year (ex: 11 = 2011)
= Week (01 - 53)
1 of 13
www.diodes.com
November 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/

1 page




ZXGD3105N8 pdf
www.DataSheet.co.kr
A Product Line of
Diodes Incorporated
ZXGD3105N8
Electrical Characteristics @TA = 25°C unless otherwise specified
VCC = 10V; RBIAS = 18k(IBIAS = 0.54mA); RREF = 9.1k(IREF = 1.02mA)
Characteristic
Input Supply
Quiescent current
Gate Driver
Gate peak source current
Gate peak sink current
Detector under DC condition
Turn-off Threshold Voltage
Gate output voltage
Switching Performance
Turn-on propagation delay
Gate rise time
Turn-off propagation delay
Gate fall time
Symbol
IQ
ISOURCE
ISINK
VT
VG(off)
VG
td(rise)
tr
td(fall)
tf
Min
-
-
-
-20
-
5.0
8.0
-
-
-
-
Typ
1.56
2
7
-10
0.2
7.8
9.4
70
175
15
20
Max
-
-
-
0
0.6
-
-
-
-
Unit Test Condition
mA VDRAIN 0mV
A Capacitive load: CL = 20nF
mV VG = 1V
VDRAIN 1V
V VDRAIN = -50mV
VDRAIN = -100mV
Capacitive load only
ns
Rise and fall measured 10% to 90%
Refer to application test circuit below
ZXGD3105N8
Document Number DS35101 Rev. 1 – 2
5 of 13
www.diodes.com
November 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/

5 Page





ZXGD3105N8 arduino
www.DataSheet.co.kr
A Product Line of
Diodes Incorporated
ZXGD3105N8
Layout guidelines
When laying out the PCB, care must be taken in decoupling the ZXGD3105 closely to VCC and ground with 1μF low-
ESR, low-ESL X7R type ceramic bypass capacitor. If the converter’s output voltage is higher than 15V, a series
voltage regulator between the converter’s output voltage and the Vcc pin, can be used to get a stable Vcc voltage.
GND is the ground reference for the internal high voltage amplifier as well as the current return for the gate driver. So
the ground return loop should be as short as possible. Sufficient PCB copper area should be allocated to the Vcc and
GND pin for heat dissipation especially for high switching frequency application.
Any stray inductance involved by the load current may cause distortion of the drain-to-source voltage waveform,
leading to premature turn-off of the synchronous MOSFET. In order to avoid this issue, drain voltage sensing should
be done as physically close to the drain terminals as possible. The PCB track length between the controller Drain pin
and MOSFET’s terminal should be kept less than 10mm. MOSFET packages with low internal wire bond inductance
are preferred for high switching frequency power conversion to minimize body diode conduction.
After the primary MOSFET turns off, its drain voltage oscillates due to reverse recovery of the snubber diode. These
high frequency oscillations are reflected across the transformer to the drain terminal of the synchronous MOSFET.
The synchronous controller senses the drain voltage ringing, causing its gate output voltage to oscillate. The
synchronous MOSFET cannot be fully enhanced until the drain voltage stabilizes.
In order to prevent this issue, the oscillations on the primary MOSFET can be damped with either a series resistor Rd
to the snubber diode or an R-C network across the diode. Both methods reduce the oscillations by softening the
snubber diode’s reverse recovery characteristic.
Figure 4 - Primary side snubber network to reduce drain voltage oscillations
ZXGD3105N8
Document Number DS35101 Rev. 1 – 2
11 of 13
www.diodes.com
November 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/

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