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PDF 2SC3314 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3314 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1323
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
VCBO
VCEO
VEBO
hFE*
VCE(sat)
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
IC = 10mA, IB = 1mA
30 V
20 V
5V
70 220
0.1 V
Base to emitter voltage
VBE VCE = 10V, IC = 1mA
0.7 V
Transition frequency
Noise figure
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
300
MHz
NF VCB = 10V, IE = –1mA, f = 5MHz
2.8 4.0 dB
Common emitter reverse transfer capacitance Cre
Reverse transfer impedance
Zrb
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
1.5 pF
50 Ω
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3314.PDF ] | |
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