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PDF 2SC3312 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3312 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistor
2SC3312
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1310
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Low noise voltage NV.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
55
7
200
100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
55 V
7V
180 700
Collector to emitter saturation voltage VCE(sat)
Base to emitter voltage
VBE
IC = 100mA, IB = 10mA
VCE = 1V, IC = 30mA
1V
1V
Transition frequency
fT VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC3312.PDF ] | |
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