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PDF 2SC3279 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3279 | |
| Descripción | NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications
Medium Power Amplifier Applications
2SC3279
Unit: mm
· High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
· Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
6
2
5
0.2
750
150
-55~150
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE (1)
VCE = 1 V, IC = 0.5 A
(Note 2)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 1 V, IC = 2 A
IC = 2 A, IB = 50 mA
VCE = 1 V, IC = 2 A
VCE = 1 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification L: 140~240, M: 200~330, N: 300~450, P: 420~600
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
10 ¾ ¾
V
6 ¾¾ V
140 ¾ 600
70 200 ¾
¾ 0.2 0.5 V
¾ 0.86 1.5
V
¾ 150 ¾ MHz
¾ 27 ¾ pF
1 2003-03-25
http://www.Datasheet4U.com
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3279.PDF ] | |
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