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PDF 2SC3267 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3267 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3267
Power Amplifier Applications
Power Switching Applications
2SC3267
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
· Complementary to 2SA1297
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
20
20
6
2
0.5
400
150
-55~150
Unit
V
V
V
A
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 0.1 mA, IC = 0
hFE (1)
(Note)
VCE = 2 V, IC = 100 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 2 V, IC = 2 A
IC = 2 A, IB = 0.1 A
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
20 ¾ ¾
V
6 ¾¾ V
120 ¾ 700
75 ¾ ¾
¾ ¾ 0.5 V
¾
¾ 0.85
V
¾ 120 ¾ MHz
¾ 30 ¾ pF
1 2003-03-25
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3267.PDF ] | |
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