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PDF 2SC3265 Data sheet ( Hoja de datos )

Número de pieza 2SC3265
Descripción Silicon NPN Epitaxial Type TRANSISTOR
Fabricantes Toshiba Semiconductor 
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2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
High DC current gain: hFE (1) = 100 to 320
Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
Complementary to 2SA1298
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
30
25
5
800
160
200
150
55 to 150
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-236MOD
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.012 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 0.1 mA, IC = 0
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 1 V, IC = 800 mA
IC = 500 mA, IB = 20 mA
VCE = 1 V, IC = 10 mA
VCE = 5 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
25 ⎯ ⎯
V
5 ⎯⎯ V
100 320
40 ⎯ ⎯
⎯ ⎯ 0.4 V
0.5 0.8 V
120 MHz
13 pF
Start of commercial production
1982-10
1 2014-03-01

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