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PDF FCH25N60N Data sheet ( Hoja de datos )
| Número de pieza | FCH25N60N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCH25N60N
N-Channel MOSFET
600V, 25A, 0.126Ω
Features
• RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A
• Ultra Low Gate Charge ( Typ. Qg = 57nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
January 2011
SupreMOS®
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GD S
TO-247
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (TC = 25oC)
Continuous (TC = 100oC)
Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 3)
S
FCH25N60N
600
±30
25
16
75
861
8.3
2.2
20
100
216
1.72
-55 to +150
300
FCH25N60N
0.58
0.24
40
©2011 Fairchild Semiconductor Corporation
FCH25N60N Rev. A2
1
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH25N60N Rev. A2
5 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCH25N60N.PDF ] | |
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