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PDF FCH47N60N Data sheet ( Hoja de datos )
| Número de pieza | FCH47N60N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCH47N60N
N-Channel MOSFET
600V, 47A, 62mΩ
Features
• 650V @TJ = 150oC
• RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A
• Ultra Low Gate Charge ( Typ.Qg =115nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
December 2011
SupreMOS TM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GD S
TO-247
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2010 Fairchild Semiconductor Corporation
FCH47N60N Rev. C1
1
G
(Note 1)
(Note 2)
(Note 3)
S
Ratings
600
±30
47
29.7
141
3068
15.7
3.7
100
20
368
2.94
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Ratings
0.34
0.24
40
Units
oC/W
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60N Rev. C1
5 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCH47N60N.PDF ] | |
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