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PDF NP88N075CUE Data sheet ( Hoja de datos )
| Número de pieza | NP88N075CUE | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N075EUE, NP88N075KUE
NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N075EUE-E1-AY Note1, 2
NP88N075EUE-E2-AY Note1, 2
NP88N075KUE-E1-AY Note1
NP88N075KUE-E2-AY Note1
NP88N075CUE-S12-AZ Note1, 2
NP88N075DUE-S12-AY Note1, 2
NP88N075MUE-S18-AY Note1
NP88N075NUE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
Ciss = 8200 pF TYP.
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14676EJ6V0DS00 (6th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
VDS = 10 V
100 TA = −55°C
25°C
75°C
175°C
10
1
0.1
2
3 45 6
VGS - Gate to Source Voltage - V
7
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
0.1
0.01
0.01
TA = 175°C
75°C
25°C
−55°C
0.1 1
VDS = 10 V
Pulsed
10 100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
VGS = 10 V
10
5
0
1 10 100 1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
300
VGS = 10 V
200
100
0
0
Pulsed
12 3 4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
20
Pulsed
15
10
ID = 44 A
5
0
04
8 12 16 20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4 ID = 250 μA
3
2
1
0
−50 0 50 100 150
Tch - Channel Temperature - °C
Data Sheet D14676EJ6V0DS
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet NP88N075CUE.PDF ] | |
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