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PDF 16N50C Data sheet ( Hoja de datos )

Número de pieza 16N50C
Descripción SIHF16N50C
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo




1. 16N50C






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SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560 V
VGS = 10 V
68
17.6
21.8
Single
TO-220AB
TO-220 FULLPAK
0.38
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
D2PAK (TO-263)
GDS
G
GD
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP16N50C-E3
D2PAK (TO-263)
SiHB16N50C-E3
TO-220 FULLPAK
SiHF16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
LIMIT
PARAMETER
TO220-AB
SYMBOL D2PAK (TO-263)
TO-220
FULLPAK
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ± 30
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
16
10
40
Linear Derating Factor
2
Single Pulse Avalanche Energyb
EAS 320
Maximum Power Dissipation
PD 250
38
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
- 55 to + 150
300
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
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16N50C pdf
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SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
10-4
Single Pulse
(Thermal Response)
10-3
10-2
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.1 1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D2PAK)
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
10-4
Single Pulse
(Thermal Response)
10-3
10-2
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.1 1 10
t1, Rectangular Pulse Duration (s)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK)
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
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