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PDF FGH40N60UF Data sheet ( Hoja de datos )
| Número de pieza | FGH40N60UF | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH40N60UF
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
July 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.43
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. B
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
600
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
td(off)
tf
Figure 14. Turn-on Characteristics vs.
Collector Current
500 Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
tr
td(on)
10
20
40 60
Collector Current, IC [A]
80
Figure 16. Switching Loss vs. Gate Resistance
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
1
Eon
Eoff
10
20
40 60
Collector Current, IC [A]
80
Figure 17. Switching Loss vs. Collector Current
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Eon
1 Eoff
0.3
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 18. Turn off Switching
SOA Characteristics
200
100
10
0.1
20
40 60
Collector Current, IC [A]
FGH40N60UF Rev. B
Safe Operating Area
VGE = 15V, TC = 125oC
1
80 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
5 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGH40N60UF.PDF ] | |
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