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PDF FGH40N60SMDF Data sheet ( Hoja de datos )
| Número de pieza | FGH40N60SMDF | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2013
FGH40N60SMDF
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching: EOFF = 6.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are
essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
20
80
40
120
349
174
-55 to +175
-55 to +175
300
Typ.
-
-
-
Max.
0.43
1.45
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGH40N60SMDF Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A
4
IC = 20A
80A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
4000
3000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
2000
Cies
1000
0
0.1
Coes
Cres
1 10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
300
100 10s
100s
1ms
10
10 ms
DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 150oC
16
12
8
80A
4
IC = 20A 40A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 100V
200V
300V
6
3
0
0 40 80 120
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
tr
10
1
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 150oC
10 20 30 40
Gate Resistance, RG []
50
©2010 Fairchild Semiconductor Corporation
FGH40N60SMDF Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH40N60SMDF.PDF ] | |
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