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PDF FGH40N60SF Data sheet ( Hoja de datos )

Número de pieza FGH40N60SF
Descripción Field Stop IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGH40N60SF
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Inverter, UPS, SMPS, PFC
March 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Inverter, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.43
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60SF Rev.A
1
www.fairchildsemi.com
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FGH40N60SF pdf
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Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
td(off)
100
tf
Figure 14. Turn-on Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
100
tr
td(on)
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 15. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
100
td(off)
tf
10
20
40 60
Collector Current, IC [A]
80
Figure 16. Switching Loss vs. Gate Resistance
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
Eon
1
Eoff
10
20
40 60
Collector Current, IC [A]
80
Figure 17. Switching Loss vs. Collector Current
30
Common Emitter
VGE = 15V, RG = 10
10 TC = 25oC
TC = 125oC
Eon
1 Eoff
0.1
20
30 40 50 60
Collector Current, IC [A]
70
80
00..32
0
10 20 30 40
Gate Resistance, RG []
50
Figure 18. Load Current vs. Frequency
140
VCC = 400V
120 load Current : peak of square wave
100
80
60
40
Duty cycle : 50%
20 T = 100oC
C
0 Power Dissipation = 116W
1 10 100
Frequency [kHz]
1000
FGH40N60SF Rev. A
5
www.fairchildsemi.com
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