(PDF) 2SC2982 Datasheet - Silicon NPN Epitaxial Type TRANSISTOR

Número de pieza	2SC2982
Descripción	Silicon NPN Epitaxial Type TRANSISTOR
Fabricantes	Toshiba Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de 2SC2982 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB IBP PC PC (Note 2) Tj Tstg 30 30 10 6 2 4 0.4 0.8 500 1000 150 −55 to 150 V V V A A mW °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2004-07-07 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet 2SC2982.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF 2SC2982 Data sheet ( Hoja de datos )