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PDF VSB3200S Data sheet ( Hoja de datos )
| Número de pieza | VSB3200S | |
| Descripción | High-Voltage Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VSB3200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 3.0 A
TJ max.
3.0 A
200 V
50 A
0.64 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case: DO-204AC (DO-15)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
Note
(1) Units mounted on PCB with 14 mm x 14 mm copper pad areas 0.375" (9.5 mm) lead length
VSB3200S
200
3.0
50
10 000
- 40 to + 150
UNIT
V
A
A
V/µs
°C
Document Number: 89143 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet VSB3200S.PDF ] | |
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