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PDF VSB3200 Data sheet ( Hoja de datos )
| Número de pieza | VSB3200 | |
| Descripción | High-Voltage Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VSB3200
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
200 V
IFSM
90 A
VF at IF = 3.0 A
0.63 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, dc-to-dc converters or
polarity protection application.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
VRRM
IF(AV)
200
3.0
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
90
Voltage rate of change (rated VR)
dV/dt
10 000
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
V
A
A
V/μs
°C
Document Number: 89144 For technical questions within your region, please contact one of the following:
Revision: 27-Sep-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet VSB3200.PDF ] | |
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