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PDF 2SC2925 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2925 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency output amplification0 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2925
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
5.0±0.2
4.0±0.2
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
s omAbsolute Maximum Ratings (Ta=25˚C)
.cParameter
Collector to base voltage
Collector to emitter voltage
UEmitter to base voltage
t4Peak collector current
Collector current
eCollector power dissipation
Junction temperature
eStorage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
15
1.5
0.7
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ShElectrical Characteristics (Ta=25˚C)
taParameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
aCollector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
1 µA
10 µA
60 V
.DCollector to emitter voltage
Emitter to base voltage
wForward current transfer ratio
VCEO
VEBO
hFE*
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
50
15
400 1000 2000
V
V
mCollector to emitter saturation voltage
w oTransition frequency
.cCollector output capacitance
VCE(sat)
fT
Cob
IC = 500mA, IB = 50mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
0.15 0.4
V
200 MHz
11 15 pF
w et4U*hFE Rank classification
eRank
R
S
T
www.DataShhFE 400 ~ 800 600 ~ 1200 1000 ~ 2000
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2925.PDF ] | |
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