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PDF VO1263AB Data sheet ( Hoja de datos )

Número de pieza VO1263AB
Descripción Dual Photovoltaic MOSFET Driver Solid State Relay
Fabricantes Vishay 
Logotipo Vishay Logotipo



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VO1263AAC/VO1263AACTR/VO1263AB
Vishay Semiconductors
Dual Photovoltaic MOSFET Driver Solid State Relay
DIP
8 76 5
SMD
1 23 4
i179020_1
– Control 1
+ Control 1
– Control 2
+ Control 2
– Output 1
+ Output 1
– Output 2
+ Output 2
DESCRIPTION
The VO1263AB/AAC photovoltaic MOSFET driver consists
of two LEDs optically coupled to two photodiode arrays. The
photodiode array provides a floating source with adequate
voltage and current to drive high-power MOSFET transistors.
Optical coupling provides a high I/O isolation voltage. In
order to turn the MOSFET off, an external resistance
(gate-to-source) is required for gate discharge.
FEATURES
• High open circuit voltage, up to 14.6 V typical
• High short circuit current, up to 42 µA typical
• Isolation test voltage 5300 VRMS
• Logic compatible input
• High reliability
• Lead (Pb)-free component
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High-side driver
• Solid state relays
• Floating power supply
• Power control
• Data acquisition
• ATE
• Isolated switching
Note
See "solid state relays" (application note 56)
AGENCY APPROVALS
UL1577: file no. E52744 system code H or J, double
protection
DIN EN: 60747-5-5
CUL:
file no. E52744, equivalent to CSA bulletin 5A
ORDER INFORMATION
PART
VO1263AAC
VO1263AACTR
VO1263AB
REMARKS
Tubes
Tape and reel
Tubes
PACKAGE
SMD-8
SMD-8
DIP-8
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
SSR
LED input ratings continous
forward current
IF 50 mA
LED input ratings reverse voltage
Photodiode array reverse voltage
Ambient operating temperature range
Storage temperature range
Pin soldering temperature (2)
Input to output isolation voltage
IR 10 µA
IR 2.0 µA
t = 7.0 s max.
t = 60 s min.
VR
VR
Tamb
Tstg
Tsld
VISO
5.0
100
- 40 to + 100
- 40 to + 150
270
5300
V
V
°C
°C
°C
VRMS
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Document Number: 84639
Rev. 1.6, 07-May-08
For technical questions, please contact: [email protected]
www.vishay.com
249
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VO1263AB pdf
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VO1263AAC/VO1263AACTR/VO1263AB
Dual Photovoltaic MOSFET Driver Solid Vishay Semiconductors
State Relay
PACKAGE DIMENSIONS in inches (millimeters)
DIP
pin one ID
0.268 (6.81)
0.255 (6.48)
4 321
5 6 78
ISO method A
0.045 (1.14)
0.030 (0.76)
4° typ.
0.050 (1.27)
0.022 (0.56)
0.018 (0.46)
i178008
0.390 (9.91)
0.379 (9.63)
0.031(0.79)
0.150 (3.81)
0.130 (3.30)
0.035 (0.89)
0.020 (0.51)
0.100 (2.54) typ.
0.300 (7.62)
typ.
10°
3° to 9°
0.012 (0.30)
0.008 (0.20)
0.250 (6.35)
0.230 (5.84)
0.130 (3.30)
0.110 (2.79)
SMD
pin one ID
0.268 (6.81)
0.255 (6.48)
ISO method A
0.390 (9.91)
0.379 (9.63)
0.045 (1.14)
0.030 (0.78)
0.031 (0.79)
typ.
0.150 (3.81)
0.130 (3.30)
0.100 (2.54)
radius
R 0.010 (0.25)
0.315 (8.00)
min.
0.435 (11.05)
0.395 (10.03)
0.375 (9.52)
0.312 (7.80)
0.298 (7.52)
i178009
typ.
0.050
(1.27)
typ.
0.008 (0.25)
0.004 (0.10)
0.100 (2.54)
typ.
0.040 (1.02)
0.020 (0.51)
10°
0.315
(8.00)
typ.
0.030 (0.76)
0.070 (1.78)
0.060 (1.52)
3° to 7°
0.010
(2.54)
typ.
Document Number: 84639
Rev. 1.6, 07-May-08
For technical questions, please contact: [email protected]
www.vishay.com
253
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