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PDF VFT3080S Data sheet ( Hoja de datos )

Número de pieza VFT3080S
Descripción Trench MOS Barrier Schottky Rectifier
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VFT3080S Hoja de datos, Descripción, Manual

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New Product
VFT3080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
ITO-220AB
123
VFT3080S
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
80 V
IFSM
200 A
VF at IF = 30 A
0.73 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT3080S
80
30
200
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89263 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
www.vishay.com
1
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