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PDF 2SC2893 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2893 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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2SC2893
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2893 is Designed for
use in UHF amplifiers up to 400 MHz.
FEATURES:
• POUT = 10.7 W Typical at 400 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC 1.5 A
VCB 55 V
VCE 32 V
VEB 3.0 V
PDISS
22 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 8.0 °C/W
D IM
A
B
C
D
E
F
G
H
I
J
K
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
B
DC
E
E
F
G
H
K
M IN IM U M
in c h e s / m m
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.245 / 6.22
.175 / 4.45
.275 / 6.99
.572 / 14.53
.130 / 3.30
.640 / 16.26
J
I
#8-32 UN C
M A X IM U M
in c h e s / m m
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 60 mA
BVCES
IC = 8.0 mA
VBE = 0 V
IEBO
VCE = 2.0 V
ICBO
VCB = 30 V
hFE VCE = 10 V IC = 400 mA
Cob VCB = 28 V
f = 1.0 MHz
Pout
VCE = 28 V
IC = 400 mA
f = 400 MHz
ηc PIN = 0.63 W
MINIMUM TYPICAL MAXIMUM
32
55
500
500
20 200
UNITS
V
V
µA
µA
---
10 15 pF
7.9 10.7
55 65
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV 0
1/1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC2893.PDF ] | |
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