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PDF UFH60GA60P Data sheet ( Hoja de datos )
| Número de pieza | UFH60GA60P | |
| Descripción | Power Module Hyperfast Rectifier | |
| Fabricantes | Vishay Siliconix | |
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UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
SOT-227
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(VISOL = 2500 VAC)
• Hyperfast reverse recovery
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VR
IF(AV) per module at TC = 126 °C
trr
600 V
60 A
39 ns
DESCRIPTION
The UFH60GA60P insulated modules integrate two state of
the art Vishay hyperfast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control,
provide an ultrasoft recovery current shape, together with
the best overall performance, ruggedness, and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be a predominant portion of the total energy, such as in
the output rectification stage of welding machines, SMPS,
and dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
VR
IF
IFSM
PD
VISOL
TJ, TStg
TEST CONDITIONS
TC = 85 °C
TC = 25 °C
TC = 85 °C
Any terminal to case, t = 1 min
MAX.
600
56
200
230
2500
- 55 to 175
UNITS
V
A
W
V
°C
Document Number: 94663 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
UFH60GA60P
Tandem Insulated SOT-227
Vishay Semiconductors
Power Module Hyperfast Rectifier, 60 A
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Document Number: 94663 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
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5 Page | ||
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