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PDF 2SC2671 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2671 | |
| Descripción | Silicon NPN epitaxial planer type(For UHF band low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q Low noise figure NF.
q High gain.
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*REB = 1kΩ
Symbol
VCBO
VCER*
VEBO
IC
PC
Tj
Tstg
Ratings
15
14
2
80
600
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Base
2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 10V, IE = 0
VEB = 1V, IC = 0
1 µA
1 µA
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
hFE
fT*
Cob*
| S21e |2
GUM*
NF*
VCE = 8V, IC = 40mA
50 150 300
VCE = 8V, IC = 40mA, f = 800MHz 3.5 5.5
GHz
VCB = 10V, IE = 0, f = 1MHz
0.8 1.5 pF
VCE = 8V, IC = 40mA, f = 800MHz 9 12
dB
VCE = 8V, IC = 40mA, f = 800MHz 10 13 15 dB
VCE = 8V, IC = 40mA, f = 800MHz
2.0 3.2 dB
Second inter modulation distortion IM2*
VCE = 8V, IC = 40mA, f1 = 200MHz
f2 = 500MHz, VO = 100dBµ/75Ω
50
60
dB
Third inter modulation distortion IM3*
*LTPD = 10%
VCE = 8V, IC = 40mA, f1 = 600MHz
f2 = 500MHz, VO = 100dBµ/75Ω
75
86
dB
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC2671.PDF ] | |
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