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PDF 2SC2669 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2669 | |
| Descripción | TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)
· Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
35
30
4
50
10
200
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Collector-base time constant
Power gain
ICBO
IEBO
VCB = 35 V, IE = 0
VEB = 4 V, IC = 0
hFE
(Note)
VCE = 12 V, IC = 2 mA
VCE (sat)
VBE
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
fT
Cob
Cc･rbb’
Gpe
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IE = -1 mA, f = 30 MHz
VCC = 6 V, IE = -1 mA, f = 10.7 MHz
(Figure 1)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 1.0 mA
40 ¾ 240
¾ ¾ 0.4 V
¾ ¾ 1.0 V
100 ¾
¾ MHz
¾ 2.0 3.2 pF
¾ ¾ 50 ps
27 30 33 dB
1 2003-03-27
1 page  
2SC2669
5 2003-03-27
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC2669.PDF ] | |
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