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PDF 2SC2636 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2636 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
s Features
q High transition frequency fT.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
50
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Emitter to base voltage
VCBO
VEBO
IC = 100µA, IE = 0
IE = 10µA, IC = 0
30
3
V
V
Forward current transfer ratio
Base to emitter voltage
Transition frequency
hFE
VBE
fT*
VCB = 10V, IE = –2mA
25
VCB = 10V, IE = –2mA
720 mV
VCB = 10V, IE = –15mA, f = 200MHz 600 1200 1600 MHz
Power gain
PG
Common base reverse transfer capacitance Crb
VCB = 10V, IE = –1mA, f = 100MHz
VCB = 6V, IE = 0, f = 1MHz
20
0.8
dB
pF
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
1.5 pF
Base time constant
rbb' · CC
VCB = 10V, IE = –10mA, f = 31.9MHz
25 ps
*fT Rank classification
Rank
T
S
fT 600 ~ 1300 900 ~ 1600
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2636.PDF ] | |
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