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PDF 2SC2634 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2634 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1127
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
VBE
fT
Noise voltage
NV
Conditions
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
ICE = 100mA, IB = 10mA
VCE = 1V, IC = 30mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min typ max Unit
1 100 nA
0.01 1
µA
60 V
55 V
7V
180 700
0.6 V
1V
200 MHz
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC2634.PDF ] | |
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