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PDF 2SC2631 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2631 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
s Features
q Satisfactory linearity of forward current transfer ratio hFE.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
150
5
100
50
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO VCB = 100V, IE = 0
1 µA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
150 V
5V
130 330
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1V
Transition frequency
fT VCB = 10V, IE = –10mA, f = 200MHz
160 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3 pF
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150 300 mV
*hFE Rank classification
Rank
R
hFE 130 ~ 220
S
185 ~ 330
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC2631.PDF ] | |
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