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PDF FDH5500 Data sheet ( Hoja de datos )

Número de pieza FDH5500
Descripción N-Channel UltraFET Power MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDH5500
N-Channel UltraFET Power MOSFET
55V, 75A, 7m
Features
„ Typ rDS(on) = 5.2mat VGS = 10V, ID = 75A
„ Typ Qg(10) = 118nC at VGS = 10V
„ Simulation Models
-Temperature Compensated PSPICE and SABERTM
Models
„ Peak Current vs Pulse Width Curve
„ UIS Rating Curve
„ Related Literature
-TB334, “Guidelines for Soldering Surface Mount
Componets to PC Boards“
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ DC Linear Mode Control
„ Solenoid and Motor Control
„ Switching Regulators
„ Automotive Systems
June 2008
©2008 Fairchild Semiconductor Corporation
FDH5500 Rev. A1
1
www.fairchildsemi.com
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FDH5500 pdf
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Typical Characteristics
1000
100 100us
10 1ms
10ms
DC
1 OPERATION IN THIS SINGLE PULSE
AREA MAY BE
TJ = MAX RATED
LIMITED BY rDS(on) TC = 25oC
0.1
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
Figure 5. Forward Bias Safe Operating Area
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
80
TJ = 175oC
40 TJ = -55oC
TJ = 25oC
0
01234567
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
160
VGS = 10V
PULSE DURATION = 80µs
120 DUTY CYCLE = 0.5% MAX
VGS = 6V
VGS = 5.5V
80
VGS = 5V
40
VGS = 4.5V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
40
ID = 75A PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
20
TJ = 175oC
10
TJ = 25oC
0
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.2
PULSE DURATION = 80µs
2.0 DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 75A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDH5500 Rev. A1
5 www.fairchildsemi.com
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