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PDF 2SC2551 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2551 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC2551 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2551
2SC2551
Hight Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Industrial Applications
Unit: mm
• High voltage: VCBO = 300 V, VCEO = 300 V
• Low saturation voltage: VCE (sat) = 0.5 V (max)
• Small collector output capacitance: Cob = 3 pF (typ.)
• Complementary to 2SA1091.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
300
300
6
100
20
400
150
−55~150
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 300 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CBO IC = 0.1 mA, IE = 0
V (BR) CEO IC = 1 mA, IB = 0
hFE (1)
(Note)
VCE = 10 V, IC = 20 mA
hFE (2)
VCE = 10 V, IC = 1 mA
VCE (sat) IC = 20 mA, IB = 2 mA
VBE (sat) IC = 20 mA, IB = 2 mA
fT VCE = 10 V, IC = 20 mA
Cob VCB = 20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90, O: 50~150
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
300 ⎯
⎯
V
300 ⎯
⎯
V
30 ⎯ 150
20 ⎯ ⎯
⎯ ⎯ 0.5 V
⎯ ⎯ 1.2 V
50 80 ⎯ MHz
⎯3
4 pF
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC2551.PDF ] | |
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