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PDF BFU660F Data sheet ( Hoja de datos )
| Número de pieza | BFU660F | |
| Descripción | NPN wideband silicon RF transistor | |
| Fabricantes | NXP Semiconductors | |
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BFU660F
NPN wideband silicon RF transistor
Rev. 1 — 11 January 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Low noise high linearity RF transistor
High output third-order intercept point 27 dBm at 1.8 GHz
40 GHz fT silicon technology
1.3 Applications
Analog/digital cordless applications
X-band high output buffer amplifier
ZigBee
SDARS second stage LNA
LTE, cellular, UMTS
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NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
Table 7. Characteristics …continued
Tj = 25 °C unless otherwise specified
Symbol Parameter
IP3O
output third-order intercept point
Conditions
IC = 40 mA; VCE = 4 V;
ZS = ZL = 50 Ω; Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Min Typ Max Unit
- 27 - dBm
- 27 - dBm
- 27 - dBm
- 28 - dBm
60
IC
(mA)
40
20
001aam823
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
0
012345
VCE (V)
Tamb = 25 °C.
(1) IB = 400 μA
(2) IB = 350 μA
(3) IB = 300 μA
(4) IB = 250 μA
(5) IB = 200 μA
(6) IB = 150 μA
(7) IB = 100 μA
(8) IB = 50 μA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
hFE
150
001aam824
100
50
0
0 20
VCE = 2 V; Tamb = 25 °C.
40 60
IC (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU660F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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BFU660F
NPN wideband silicon RF transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU660F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
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