|
|
PDF BFU630F Data sheet ( Hoja de datos )
| Número de pieza | BFU630F | |
| Descripción | NPN wideband silicon RF transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BFU630F (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz
High maximum stable gain 26 dB at 1.8 GHz
40 GHz fT silicon technology
1.3 Applications
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ku band oscillators DRO’s
LNB
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
Table 7. Characteristics …continued
Tj = 25 C unless otherwise specified
Symbol Parameter
IP3 third-order intercept point
Conditions
IC = 30 mA; VCE = 2.5 V;
ZS = ZL = 50 ; Tamb = 25 C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Min Typ Max Unit
- 25.5 -
- 26 -
- 26.5 -
- 27.5 -
dBm
dBm
dBm
dBm
25
IC
(mA)
20
15
10
5
001aam813
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
012345
VCE (V)
Tamb = 25 C.
(1) IB = 200 A
(2) IB = 180 A
(3) IB = 160 A
(4) IB = 140 A
(5) IB = 120 A
(6) IB = 100 A
(7) IB = 80 A
(8) IB = 60 A
(9) IB = 40 A
(10) IB = 20 A
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
hFE
150
001aam814
100
50
0
0 10
VCE = 2 V; Tamb = 25 C.
20 30
IC (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU630F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU630F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 December 2010
© NXP B.V. 2010. All rights reserved.
11 of 12
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BFU630F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFU630F | NPN wideband silicon RF transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |