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PDF SB20H150CT-1 Data sheet ( Hoja de datos )
| Número de pieza | SB20H150CT-1 | |
| Descripción | Dual Common-Cathode High-Voltage Schottky Rectifier | |
| Fabricantes | Vishay Siliconix | |
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www.DataSheet.co.kr
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
1 23
MBR20H150CT
1 23
MBRF20H150CT
TO-262AA
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection applications.
1 23
SB20H150CT-1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
2 x 10 A
150 V
200 A
0.75 V
175 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
IRRM
ERSM
EAS
dV/dt
TJ, TSTG
VAC
MBR20H150CT
150
150
150
20
10
200
1.0
10
11.25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
V/μs
°C
V
Revision: 09-Aug-11
1 Document Number: 88864
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
K
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
PIN
123
0.488 (12.4)
0.472 (12.00)
0.035 (0.90)
0.028 (0.70)
0.405 (10.28)
0.389 (9.88)
0.370 (9.40)
0.354 (9.00)
0.425 (10.80)
0.393 (10.00)
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
0.100
(2.54) TYP.
0.062 (1.57)
0.054 (1.37)
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
Revision: 09-Aug-11
5 Document Number: 88864
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SB20H150CT-1.PDF ] | |
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