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PDF 2SC2404 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2404 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2404
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
15
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : U
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Noise figure
Symbol
VCBO
VEBO
hFE*
VBE
fT
Cre
PG
NF
Conditions
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 100MHz
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
min typ max Unit
30 V
3V
40 260
0.72 V
450 650
MHz
0.8 1 pF
24 dB
3.3 dB
*hFE Rank classification
Rank
hFE
Marking Symbol
B
40 ~ 110
UB
C
65 ~ 160
UC
D
100 ~ 260
UD
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2404.PDF ] | |
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