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Número de pieza | 2SC2295 | |
Descripción | Silicon PNP Epitaxial Transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC2295 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1022
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
CEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : V
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Forward current transfer ratio
ICBO
hFE*
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
0.1 µA
70 220
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
250
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
2.8 4 dB
22 50 Ω
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
0.9 1.5 pF
*hFE Rank classification
Rank
hFE
Marking Symbol
B
70 ~ 140
VB
C
110 ~ 220
VC
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SC2295.PDF ] |
Número de pieza | Descripción | Fabricantes |
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