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PDF GB200TS60NPBF Data sheet ( Hoja de datos )

Número de pieza GB200TS60NPBF
Descripción Ultrafast Speed IGBT
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 200 A, 25 °C
600 V
209 A
2.6 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 minute
MAX.
600
209
142
400
400
178
121
± 20
781
438
2500
UNITS
V
A
V
W
V
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
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GB200TS60NPBF pdf
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GB200TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 209 A
100
90 10 ohm
80
70
27 ohm
60
50
47 ohm
40
30
20
40
80 120 160
IF (A)
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
200
100
90
80
70
60
50
40
30
0
10 20 30 40 50
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 200 A
100
90
80
70
60
50
600 700 800 900 1000 1100 1200 1300
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
5
10 15 20 25 30 35 40 45 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance
TJ = 125 °C, L = 200 μH, Rg = 10 Ω,
VCC = 360 V, VGE = 15 V
100
Ic = 200A
10
Ic = 100A
Ic = 50A
1
0 25 50 75 100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V
12
11
10
9
8
7
6
5
4
3
2
40 60 80 100 120 140 160 180 200 220
IC (A)
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
TJ = 125 °C,Rg1 = 10 Ω, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
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