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PDF GA400TD60S Datasheet ( Hoja de datos )

Número de pieza GA400TD60S
Descripción Standard Speed IGBT
Fabricantes Vishay Siliconix 
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GA400TD60S datasheet

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GA400TD60S pdf
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GA400TD60S
Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors
(Standard Speed IGBT), 400 A
175
150
125
100
Eoff
75
50
25
0
0
Eon
100 200 300 400
93363_11
IC (A)
Fig. 11 - Typical IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 360 V, Rg = 1.5 ,
VGE = 15 V, L = 500 μH
10 000
1000 td(off)
td(on)
100
tf
tr
10
0
100 200 300 400
93363_12
IC (A)
Fig. 12 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 360 V, Rg = 1.5 ,
VGE = 15 V, L = 500 μH
175
150 Eoff
125
100
75
50
Eon
25
0
0 5 10 15 20 25
93363_13
Rg (Ω)
Fig. 13 - Typical IGBT Energy Loss vs. Rg,
TJ = 125 °C, IC = 400 A, VCC = 360 V,
VGE = 15 V, L = 500 μH
10 000
1000
tf
td(on)
tr
td(off)
100
0
5 10 15 20 25
93363_14
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg,
TJ = 125 °C, IC = 400 A, VCC = 360 V,
VGE = 15 V, L = 500 μH
300
280
260
240 TJ = 125 °C
220
200
180
160 TJ = 25 °C
140
120
100
100 200 300 400 500 600 700 800 900 1000
93363_15
dIF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt,
VCC = 400 V, IF = 300 A
130
120
110
100
90
80 TJ = 125 °C
70
60
50
40 TJ = 25 °C
30
20
10
100 200 300 400 500 600 700 800 900 1000
93363_16
dIF/dt (A/µs)
Fig. 16 - Typical Reverse Recovery Current vs. dIF/dt,
VCC = 400 V, IF = 300 A
Document Number: 93363
Revision: 31-May-11
For technical questions, contact: indmodules@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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