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PDF GA200TS60UX Datasheet ( Hoja de datos )

Número de pieza GA200TS60UX
Descripción Ultra-FastTM Speed IGBT
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

Total 9 Páginas
		
GA200TS60UX Hoja de datos, Descripción, Manual
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Bulletin I27221 03/06
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast:Optimizedforhighoperating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Verylowconduction andswitchinglosses
• HEXFREDTMantiparalleldiodeswithultra-soft
recovery
• Industry standard package
• UL approved
GA200TS60UX
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.74V
@ VGE = 15V, IC = 200A
Benefits
Increasedoperatingefficiency
• Direct mounting to heatsink
• Performanceoptimizedforpowerconversion:
UPS, SMPS, Welding
• Low EMI, requires less snubbing
INT-A-PAK
Absolute Maximum Ratings
VCES
IC
ICM
ILM
IFM
VGE
VISOL
PD
Parameters
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 85°C
www.irf.com
Max
600
265
400
400
400
± 20
2500
625
325
Units
V
A
V
W
1
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GA200TS60UX pdf
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20 VCC = 400V
I C = 135A
16
12
8
4
0
0 200 400 600 800 1000
QG , Total gate Charge (nC)
Fig. 7 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
GA200TS60UX
Bulletin I27221 03/06
40
Vcc = 360V
Tj = 125°C
35
Vge = 15V
Ic = 200A
30
25
20
0
10 20 30 40 50
RG Gate Resistance (Ω)
Fig. 8 - Typ. Switching Losses vs. Gate
Resistance
70
60
Vcc = 360V
Tj = 125°C
50
40
Vge = 15V
Rg1 = 15Ω
30 Rg2 =
20
10
0
0 50 100 150 200 250 300 350 400
IC, Collector-to-Emitter Current (A)
Fig. 9 - Typ. Switching Losses vs. Collec-
tor-to-Emitter Current
www.irf.com
500
Vge = 20V
400
SAFE OPERATING AREA
300
200
100
0
0 100 200 300 400 500 600 700
VCE, Collector-to-Emitter Voltage (V)
Fig. 10 - Reverse Bias SOA
5
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