PDF GA200TS60UPBF Data sheet ( Hoja de datos )

Número de pieza	GA200TS60UPBF
Descripción	IGBT
Fabricantes	Vishay Siliconix
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No Preview Available ! www.DataSheet.co.kr GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A INT-A-PAK FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ultrasoft recovery • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 200 A, 25 °C 600 V 265 A 1.74 V BENEFITS • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, welding • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Peak switching current Peak diode forward current Gate to emitter voltage RMS isolation voltage ICM ILM IFM VGE VISOL Maximum power dissipation PD TEST CONDITIONS TC = 25 °C TC = 67 °C Any terminal to case, t = 1 min TC = 25 °C TC = 85 °C MAX. 600 265 200 400 400 400 ± 20 2500 625 325 UNITS V A V W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coeff. of threshold voltage Forward transconductance Collector to emitter leakage current VBR(CES) VCE(on) VGE(th) ΔVGE(th)/ΔTJ gfe ICES Diode forward voltage drop Gate to emitter leakage current VFM IGES VGE = 0 V, IC = 1 mA VGE = 15 V, IC = 200 A VGE = 15 V, IC = 200 A, TJ = 125 °C IC = 0.25 mA VCE = VGE, IC = 0.25 mA VCE = 20 V, IC = 200 A VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C IC = 200 A, VGE = 0 V IC = 200 A, VGE = 0 V, TJ = 125 °C VGE = ± 20 V MIN. 600 - - 3 - - - - - - - TYP. - 1.74 1.79 4.4 - 11 220 0.014 - 4.2 4.4 - MAX. - 2.2 2.25 6 - - 1 10 6.0 6.2 ± 250 UNITS V mV/°C S mA V nA Document Number: 94545 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ 1 page www.DataSheet.co.kr 1000 GA200TS60UPbF "Half-Bridge" IGBT INT-A-PAKVishay High Power Products (Ultrafast Speed IGBT), 200 A 20000 100 TJ = 25 °C TJ = 125 °C 10 1.0 2.0 3.0 4.0 5. 6.0 VFM - Forward Voltage Drop (V) Fig. 11 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 20000 15000 10000 5000 400 A, 125 °C 200 A, 125 °C 100 A, 125 °C 400 A, 25 °C 200 A, 25 °C 100 A, 25 °C 0 500 1000 1500 2000 dIF/ dt (A/µs) Fig. 12 - Typical Stored Charge vs. dIF/dt 15000 10000 5000 400 A, 125 °C 200 A, 125 °C 100 A, 125 °C 400 A, 25 °C 200 A, 25 °C 100 A, 2 5°C 0 500 1000 1500 2000 dIF/ dt (A/µs) Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt 250 200 400 A, 125 °C 200 A, 125 °C 100 A, 125 °C 150 100 400 A, 25 °C 50 200 A, 25 °C 100 A, 25 °C 0 500 1000 1500 2000 dIF/ dt (A/µs) Fig. 14 - Typical Reverse Recovery vs. dIF/dt Document Number: 94545 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 5 Datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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