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PDF GA100TS120UPBF Data sheet ( Hoja de datos )

Número de pieza GA100TS120UPBF
Descripción IGBT
Fabricantes Vishay Siliconix 
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GA100TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 100 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
1200 V
182 A
2.25 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
ICM
ILM
IFM
VGE
VISOL
PD
TJ
TStg
TEST CONDITIONS
TC = 25 °C
TC = 93 °C
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 85 °C
MAX.
1200
182
100
200
200
200
± 20
2500
520
270
- 40 to + 150
- 40 to + 125
UNITS
V
A
V
W
°C
Document Number: 94428
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
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GA100TS120UPBF pdf
www.DataSheet.co.kr
GA100TS120UPbF
"Half-Bridge" IGBT INT-A-PAK Vishay High Power Products
(Ultrafast Speed IGBT), 100 A
40
35
30
25
20
10 20 30 40 50
RG - Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
IC = 200 A
IC = 100 A
10
IC = 50 A
300
VGE = 20 V
TJ = 125 °C
VCE measured at terminal (peak voltage)
200
100
Safe operating area
0
0 300 600 900 1200 1500
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
1000
100
TJ = 125 °C
TJ = 25 °C
10
1
0 30 60 90 120 150
TJ - Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
60
50
40
30
20
10
0
0 50 100 150 200
IC - Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF - Forward Voltage Drop (V)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
16 000
12 000
VR = 720 V
TJ = 125 °C
TJ = 25 °C
8000
4000
0
400
IF = 200 A
IF = 100 A
IF = 50 A
800
1200
1600
2000
dIF/dt (A/µs)
Fig. 14 - Typical Stored Charge vs. dIF/dt
Document Number: 94428
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
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