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PDF GA100NA60U Data sheet ( Hoja de datos )
| Número de pieza | GA100NA60U | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 94290
INSULATED GATE BIPOLAR TRANSISTOR
GA100NA60U
Ultra-FastTM Speed IGBT
Features
• UltraFastTM: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz in
hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2,500 Volt AC/RMS)
• Very low internal inductance (≤ 5 nH typ.)
• Industry standard outline
2
Benefits
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
3
VCES = 600V
1 VCE(on) typ. = 1.49V
@VGE = 15V, IC = 50A
4
SOT-227
Max.
600
100
50
200
200
± 20
2500
250
100
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
Wt
www.irf.com
Junction-to-Case, IGBT
Thermal Resistance, Junction-to-Case , Diode
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
–––
0.05
30
Max.
0.50
1.0
–––
–––
Units
°C/W
gm
1
7/27/01
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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GA100NA60U
10
VCC= 480V
VGE = 15V
TJ = 25°C
8 I C= 60A
6
4
100
RG = 5.0Ω
VGE = 15V
VCC= 480V
10
1
IC = 120A
IC = 60A
IC = 30A
2
0
10 20 30 40 50
RG, Gate Resistance ( Ω)
Fig. 8 - Typical Switching Losses vs. Gate
Resistance
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
12
RG = 5.0Ω
TJ = 150°C
10 VGE = 15V
VCC= 480V
8
6
4
2
0
20
40 60 80
IC, Collector Current (A)
Fig. 10 - Typical Switching Losses vs.
Collector-to-Emitter Current
www.irf.com
100
1000 VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Turn-Off SOA
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GA100NA60U.PDF ] | |
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