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PDF VEC2819 Data sheet ( Hoja de datos )

Número de pieza VEC2819
Descripción P-Channel Silicon MOSFET / Schottky Barrier Diode
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! VEC2819 Hoja de datos, Descripción, Manual

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Ordering number : ENA0536
VEC2819
SANYO Semiconductors
DATA SHEET
VEC2819
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
Low ON-resistance
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Low switching noise.
Low leakage current and high reliability due to planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Marking : CT
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm20.8mm) 1unit
Ratings
Unit
--20
±10
--3.5
--14
1.0
150
--55 to +125
V
V
A
A
W
°C
°C
30 V
30 V
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13107PE TI IM TC-00000472 No. A0536-1/6
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VEC2819 pdf
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VEC2819
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
7
5
3
2
IF -- VF
[SBD]
0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage, VF -- V
C -- VR
IT08588
[SBD]
100
7
5
3
2
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
Reverse Voltage, VR -- V
IT08590
IFSM -- t
[SBD]
14
Current waveform 50Hz sine wave
12 IS
10 20ms
t
8
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
7
5
3
2
0.0001
7
5
3
2
0.00001
0
5
1.4
Rectangular
wave
1.2
θ
1.0 360°
Sine wave
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
0°C
--25°C
[SBD]
10 15 20 25
Reverse Voltage, VR -- V
PF(AV) -- IO
30 35
IT08589
[SBD]
(1) (2)(4)(3)
0.8
180°
0.6 360°
0.4
(1)Rectangular wave θ=60°
0.2 (2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
0 (4)Sine wave θ=180°
0 0.5 1.0 1.5 2.0 2.5
Average Output Current, IO -- A IT08591
6
4
2
0
7 0.01
23
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
ID00435
No. A0536-5/6
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