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PDF VEC2611 Data sheet ( Hoja de datos )
| Número de pieza | VEC2611 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : ENA0425
VEC2611
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
VEC2611 General-Purpose Switching Device
Applications
Features
• The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
• 1.8V drive.
• Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Mounted on a ceramic board (900mm2✕0.8mm)
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : CP
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
N-channel
P-channel
20 --12
±10 ±8
3 --2.6
12 --10.4
0.9
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
20 V
1 µA
±10 µA
0.4 1.3 V
3.3 5.6
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62007PE TI IM TC-00000769 No. A0425-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
VEC2611
Ciss, Coss, Crss -- VDS [Nch]
1000
f=1MHz
7
5
3 Ciss
2
100
7 Coss
5 Crss
3
2
Ciss, Coss, Crss -- VDS [Pch]
1000
f=1MHz
7
5 Ciss
3
2
Coss
100
7 Crss
5
10
0 2 4 6 8 10 12 14 16
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
4.0
VDS=10V
3.5 ID=3A
18 20
IT03497
[Nch]
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT03498
ASO
[Nch]
3
2 IDP=12A
PW≤10µs
10
7
5 ID=3A
3
2
1.0
7
5
3
2
Operation in this
1ms 100µs
DC operatio1n0(0Tma=s25°C) 10ms
0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V IT11102
PD -- Ta
[Nch, Pch]
1.2
3
0 --2 --4 --6 --8 --10 --12
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
--4.5
VDS= --6V
--4.0 ID= --2.6A
IT04332
[Pch]
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
01234567
Total Gate Charge, Qg -- nC
IT04333
ASO
[Pch]
3
2
IDP= --10.4A
--10
7
5
3 ID= --2.6A
2
--1.0
7
5
3
2
PW≤10µs
DC operatio1n0(0Tma=s1205m°Cs1)ms
100µs
--0.1 Operation in this
7
5
area is limited by RDS(on).
3 Ta=25°C
2 Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10
23
Drain-to-Source Voltage, VDS -- V IT11103
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2✕0.8mm) 1unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11104
No. A0425-5/6
Datasheet pdf - http://www.DataSheet4U.net/
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