DataSheet.es    


PDF VEC2607 Data sheet ( Hoja de datos )

Número de pieza VEC2607
Descripción N-Channel and P-Channel Silicon MOSFETs
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



Hay una vista previa y un enlace de descarga de VEC2607 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! VEC2607 Hoja de datos, Descripción, Manual

www.DataSheet.co.kr
Ordering number : ENN8359
VEC2607
VEC2607
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
The best suited for inverter applications.
The VEC2607 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
Low voltage drive.
Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Mounted on a ceramic board (900mm2!0.8mm)
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : CA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2A, VGS=4V
ID=1A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
20 --12
±10 ±8
4.5 --4
18 --16
0.9
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
20 V
1 µA
±10 µA
0.5 1.3 V
4.5 7.5
S
32 42 m
40 57 m
55 80 m
570 pF
110 pF
80 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PE MS IM TB-00001478 No.8359-1/6
Datasheet pdf - http://www.DataSheet4U.net/

1 page




VEC2607 pdf
www.DataSheet.co.kr
VEC2607
Ciss, Coss, Crss -- VDS [Nch]
2
f=1MHz
1000
7
5
Ciss
3
2
Coss
100 Crss
7
5
3
0 5 10 15
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
4.0
VDS=10V
3.5 ID=4.5A
20
IT08607
[Nch]
3.0
2.5
2.0
1.5
1.0
0.5
0
012345678
Total Gate Charge, Qg -- nC
IT09311
ASO
[Nch]
3
2
10µs
10 IDP=18A
7
5
ID=4.5A
3
2
1.0
7
5
3
1ms
DC oper1a0ti0omn1s0ms
2
Operation in this
0.1
7
area is limited by RDS(on).
5
3 Ta=25°C
2
Single pulse
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V IT09285
PD -- Ta
[Nch / Pch]
1.2
Mounted on a ceramic board (900mm2!0.8mm)
1.0
0.9
0.8
0.6 T1outnailtDissipation
0.4
Ciss, Coss, Crss -- VDS [Pch]
2
f=1MHz
1000
7
5
Ciss
3
Coss
2 Crss
100
0
--2 --4 --6 --8 --10 --12
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
--4.5
VDS= --6V
--4.0 ID= --4A
IT03872
[Pch]
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 2 4 6 8 10 12
Total Gate Charge, Qg -- nC
ASO
3
2 IDP= --16A
IT09312
[Pch]
<10µs
--10
7
5
ID= --4A
3
2
--1.0
7
5
1ms
DC
100m1s0ms
operation
3
2
Operation in this
area is limited by RDS(on).
--0.1
7
5
3 Ta=25°C
2 Single pulse
Mounted on a ceramic board (900mm2!0.8mm) 1unit
--0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
2
Drain-to-Source Voltage, VDS -- V IT09286
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09287
No.8359-5/6
Datasheet pdf - http://www.DataSheet4U.net/

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet VEC2607.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
VEC2601N-Channel and P-Channel Silicon MOSFETsSanyo Semicon Device
Sanyo Semicon Device
VEC2602N-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device
VEC2603N-Channel and P-Channel Silicon MOSFETsSanyo Semicon Device
Sanyo Semicon Device
VEC2605P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device ApplicationsSanyo Semicon Device
Sanyo Semicon Device

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar